Oxidation effects on the optical and electrical properties of MoS2 under controlled baking temperatures

Abstract

As silicon-based semiconductor technology scales down to the nanoscale, it encounters significant physical limitations, including reduced electron mobility, short- channel effects, and increased heat generation, which hinder device performance and reliability. Two-dimensional (2D) semiconductors, such as molybdenum disulfide (MoS2), offer great potential with superior electrical properties at the nanoscale, but the issue of excessive heat generation in highly integrated circuits persists. Therefore, it is essential to investigate the thermal durability of MoS2 under various heating conditions and its impact on physical properties and device performance. In this study, we systematically investigated the oxidation behavior and related physical property variations of CVD-grown MoS2 monolayers by baking them at different temperatures. It was clearly revealed that high-temperature baking induces p-doping and structural deformation, significantly altering optical and electrical properties. Despite the degradation in device performance, reduced interfacial Coulomb scattering was observed, suggesting potential for improved device stability. This study underscores the importance of understanding thermal stability to accelerate the development of 2D semiconductors for next-generation electronic devices.