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Analysis of defect in indium gallium zinc oxide thin film transistor as a function of ALD indium deposition cycle

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dc.contributor.author정권범-
dc.date.accessioned2025-01-18T00:31:38Z-
dc.date.available2025-01-18T00:31:38Z-
dc.date.issued2024-06-04-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/57435-
dc.titleAnalysis of defect in indium gallium zinc oxide thin film transistor as a function of ALD indium deposition cycle-
dc.typeConference-
dc.citation.startPage96-
dc.citation.endPage96-
dc.citation.conferenceNameISPSA 2024-
dc.citation.conferencePlace대한민국-
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College of Natural Science (Department of Physics)
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