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Evolution of defect states below the conduction band in InSnZnO thin film transistors as a function of annealing ambient
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 정권범 | - |
| dc.date.accessioned | 2025-01-18T00:31:37Z | - |
| dc.date.available | 2025-01-18T00:31:37Z | - |
| dc.date.issued | 2024-03-28 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/57432 | - |
| dc.title | Evolution of defect states below the conduction band in InSnZnO thin film transistors as a function of annealing ambient | - |
| dc.type | Conference | - |
| dc.citation.startPage | 36 | - |
| dc.citation.endPage | 36 | - |
| dc.citation.conferenceName | ITC 2024 (The 18th International Thin-Film Transistor Conference) | - |
| dc.citation.conferencePlace | 대한민국 | - |
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Related Researcher
- Chung, Kwun Bum
- College of Natural Science (Department of Physics)