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The correlation between electrical properties and quantitative defect analysis as a function of electrode junction type of amorphous indium tin zinc oxide thin film transistor
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 정권범 | - |
| dc.date.accessioned | 2025-01-18T00:31:36Z | - |
| dc.date.available | 2025-01-18T00:31:36Z | - |
| dc.date.issued | 2024-10-28 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/57430 | - |
| dc.title | The correlation between electrical properties and quantitative defect analysis as a function of electrode junction type of amorphous indium tin zinc oxide thin film transistor | - |
| dc.type | Conference | - |
| dc.citation.startPage | 346 | - |
| dc.citation.endPage | 347 | - |
| dc.citation.conferenceName | The 7th intenational conference on active materials and soft mechanics (AMSM2024) | - |
| dc.citation.conferencePlace | 대한민국 | - |
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Related Researcher
- Chung, Kwun Bum
- College of Natural Science (Department of Physics)