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Amorphous indium-tin-zinc oxide thin film transistor correlation between electrical properties and defect analysis as a function of conductive homojunction layer insertion electrode
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 정권범 | - |
| dc.date.accessioned | 2025-01-18T00:31:36Z | - |
| dc.date.available | 2025-01-18T00:31:36Z | - |
| dc.date.issued | 2024-11-13 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/57428 | - |
| dc.title | Amorphous indium-tin-zinc oxide thin film transistor correlation between electrical properties and defect analysis as a function of conductive homojunction layer insertion electrode | - |
| dc.type | Conference | - |
| dc.citation.startPage | 29 | - |
| dc.citation.endPage | 29 | - |
| dc.citation.conferenceName | MNC 2024 | - |
| dc.citation.conferencePlace | 일본 | - |
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Related Researcher
- Chung, Kwun Bum
- College of Natural Science (Department of Physics)