High-performance Oxide Transistor Induced by a Metal Capping Layer on the Active Layer with Controlled Hydrogen Content

김현석

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High-performance Oxide Transistor Induced by a Metal Capping Layer on the Active Layer with Controlled Hydrogen Content

Authors: 김현석

Issue Date: 20-Aug-2024

URI: https://scholarworks.dongguk.edu/handle/sw.dongguk/57289

Place: 대한민국

Conference Name: IMID 2024

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Appears in Collections: College of Engineering > Department of Energy and Materials Engineering > 2. Conference Papers

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Kim, Hyun Suk: College of Engineering (Department of Energy and Materials Engineering)

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