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Ni-doped (MoO3/MoS2) heterostructure chemiresistive sensor for dual selective detection of NH3 and NOx at room temperature

Authors
Muthumalai, K.Manoharan, MathankumarGovindharaj, KamarajSaravanan, PoovarasanHaldorai, YuvarajSofer, ZdeněkRajendra Kumar, Ramasamy Thangavelu
Issue Date
Jan-2025
Publisher
Elsevier Ltd
Keywords
Heterostructure; MoS2/MoO3; NH3; Ni doping; Nitrogen oxides; Room-temperature
Citation
Ceramics International, v.51, no.1, pp 1017 - 1024
Pages
8
Indexed
SCIE
SCOPUS
Journal Title
Ceramics International
Volume
51
Number
1
Start Page
1017
End Page
1024
URI
https://scholarworks.dongguk.edu/handle/sw.dongguk/56326
DOI
10.1016/j.ceramint.2024.11.084
ISSN
0272-8842
1873-3956
Abstract
The transition metal dichalcogenide heterostructures are emerging as promising candidates for room-temperature gas sensors. This work presents a Ni-doped (MoO3/MoS2) heterostructure, synthesized via hydrothermal methods with varying Ni concentrations, for the dual selective detection of NH3 and NOx gases. The electronic sensitization of Ni improves the sensitivity of heterostructure. The heterostructure was characterized by using X-ray diffractometer, field emission scanning electron microscopy (FESEM), and transmission electron microscopy (TEM), with Ni incorporation confirmed by X-ray photoelectron spectroscopy (XPS). The 10 % Ni-doped MoO3/MoS2 heterostructure showed high sensitivity, achieving responses of 15 % and 18.3 % towards 10 ppm NH3 and NOx, respectively, with detection limits of 0.13 ppm and 0.11 ppm. Furthermore, the sensor demonstrated outstanding cyclic stability, device-to-device reproducibility, and long-term stability, with a retained response of 98.1 % and 98.5 % towards NH3 and NOx, respectively. These findings highlight the potential of Ni-doped (MoO3/MoS2) heterostructures for dual gas sensing applications at room temperature. © 2024 Elsevier Ltd and Techna Group S.r.l.
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