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Characteristics of InGaZnO thin films transistors using neutron irradiation method
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 정권범 | - |
| dc.date.accessioned | 2024-10-30T20:24:34Z | - |
| dc.date.available | 2024-10-30T20:24:34Z | - |
| dc.date.issued | 2018-02-08 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/54789 | - |
| dc.title | Characteristics of InGaZnO thin films transistors using neutron irradiation method | - |
| dc.type | Conference | - |
| dc.citation.startPage | 33 | - |
| dc.citation.endPage | 33 | - |
| dc.citation.conferenceName | 한국진공학회 | - |
| dc.citation.conferencePlace | 대한민국 | - |
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Related Researcher
- Chung, Kwun Bum
- College of Natural Science (Department of Physics)