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Improvement in electrical device properties of homojunction interface in InZnO thin film transistor

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dc.contributor.author정권범-
dc.date.accessioned2024-10-30T19:04:30Z-
dc.date.available2024-10-30T19:04:30Z-
dc.date.issued2017-05-23-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/53591-
dc.titleImprovement in electrical device properties of homojunction interface in InZnO thin film transistor-
dc.typeConference-
dc.citation.startPage1-
dc.citation.endPage1-
dc.citation.conferenceNameEuropean Materials Research Society 2017 spring-
dc.citation.conferencePlace대한민국-
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