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NH3 분위기 후열처리에 따른 SiC 기판 위에 성장된 HfO2 박막의 계면 변화 연구
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 정권범 | - |
| dc.date.accessioned | 2024-10-30T18:43:38Z | - |
| dc.date.available | 2024-10-30T18:43:38Z | - |
| dc.date.issued | 2016-02-17 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/53109 | - |
| dc.title | NH3 분위기 후열처리에 따른 SiC 기판 위에 성장된 HfO2 박막의 계면 변화 연구 | - |
| dc.type | Conference | - |
| dc.citation.startPage | 299 | - |
| dc.citation.endPage | 299 | - |
| dc.citation.conferenceName | 한국진공학회 | - |
| dc.citation.conferencePlace | 대한민국 | - |
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Collections - College of Natural Science > Department of Physics > 2. Conference Papers
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Related Researcher
- Chung, Kwun Bum
- College of Natural Science (Department of Physics)