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Cited 3 time in webofscience Cited 4 time in scopus
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Design of a Pseudo-Wide Dynamic Range CMOS Image Sensor by Using the Bidirectional Gamma Curvature Technique

Authors
Im, HyejinPark, KeunyeolCho, Jae HeeChoo, Hyun SeonKim, Soo Youn
Issue Date
May-2021
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Generators; Random access memory; Transfer functions; Signal resolution; Lighting; Frequency control; Dynamic range; CMOS image sensor; dynamic range; gamma correction; log-exponential counter; single-slope analog-to-digital converter
Citation
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, v.68, no.5, pp 1596 - 1599
Pages
4
Indexed
SCIE
SCOPUS
Journal Title
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
Volume
68
Number
5
Start Page
1596
End Page
1599
URI
https://scholarworks.dongguk.edu/handle/sw.dongguk/5031
DOI
10.1109/TCSII.2021.3065992
ISSN
1549-7747
1558-3791
Abstract
This brief presents a 640x480 CMOS image sensor (CIS) with in-circuit bidirectional gamma correction for use in computer vision applications. The conventional gamma correction method can saturate the bright region in an image, leading to the loss of bright image information. Using the proposed bidirectional gamma correction method, which can be implemented with a log-exponential counter, both bright and dark regions in an image can be simultaneously corrected. The transfer function of an 8-bit single-slope analog-to-digital converter can be selected considering either linear or bidirectional gamma curves with three different slope-change points to enhance the visibility in the pseudo-dynamic range. From the prototype sensor, we observed that the visibility of dark images was increased with proper bidirectional gamma curvatures. The CIS was fabricated in a 110 nm CIS process, and the full chip area was 5900 mu m x 5240 mu m. The total power consumption was 6 mW at a rate of 15 frames per second with an analog, pixel, and digital supply voltage of 3.3 V, 3.3 V, and 1.5 V, respectively.
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