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Improvement of electrical characteristic of InGaZnO thin film transistor by combined post processing of hydrogen irradiation and low temperature annealing
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 정권범 | - |
| dc.date.accessioned | 2024-10-30T15:23:17Z | - |
| dc.date.available | 2024-10-30T15:23:17Z | - |
| dc.date.issued | 2014-10-22 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/50114 | - |
| dc.title | Improvement of electrical characteristic of InGaZnO thin film transistor by combined post processing of hydrogen irradiation and low temperature annealing | - |
| dc.type | Conference | - |
| dc.citation.startPage | 83 | - |
| dc.citation.endPage | 83 | - |
| dc.citation.conferenceName | 한국물리학회 가을학술논문발표회 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 광주 김대중컨벤션센터 | - |
| dc.citation.conferenceDate | 2014-10-22 ~ 2014-10-24 | - |
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Related Researcher
- Chung, Kwun Bum
- College of Natural Science (Department of Physics)