DC characteristics of AlGaN/GaN HEMTs using a dual gate structure

김현석

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DC characteristics of AlGaN/GaN HEMTs using a dual gate structure

Authors: 김현석

Issue Date: 2-Jul-2014

URI: https://scholarworks.dongguk.edu/handle/sw.dongguk/49644

Place: 대한민국

Conference Name: NANO KOREA 2014

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Appears in Collections: College of Engineering > Department of Electronics and Electrical Engineering > 2. Conference Papers

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Kim, Hyun Seok: College of Engineering (Department of Electronics and Electrical Engineering)

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