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DC characteristics of AlGaN/GaN HEMTs using a dual gate structure
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김현석 | - |
| dc.date.accessioned | 2024-10-30T14:43:26Z | - |
| dc.date.available | 2024-10-30T14:43:26Z | - |
| dc.date.issued | 2014-07-02 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/49644 | - |
| dc.title | DC characteristics of AlGaN/GaN HEMTs using a dual gate structure | - |
| dc.type | Conference | - |
| dc.citation.startPage | 1401 | - |
| dc.citation.endPage | 016 | - |
| dc.citation.conferenceName | NANO KOREA 2014 | - |
| dc.citation.conferencePlace | 대한민국 | - |
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Related Researcher
- Kim, Hyun Seok
- College of Engineering (Department of Electronics and Electrical Engineering)