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Cited 5 time in webofscience Cited 5 time in scopus
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Enhanced UV photodetectivity in solution driven ZnO nanosheets via piezo-phototronic effectopen access

Authors
Lee, Dong JinRyu, Sung RyongKumar, Ganesan MohanAhn, Il-HoKyhm, JihoonKim, Deuk YoungIlanchezhiyan, Pugazhendi
Issue Date
Jul-2021
Publisher
ELSEVIER
Keywords
ZnO nanosheets; Cathodoluminescence; Photodetector; Piezo-phototronic effects
Citation
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T, v.13, pp 397 - 407
Pages
11
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T
Volume
13
Start Page
397
End Page
407
URI
https://scholarworks.dongguk.edu/handle/sw.dongguk/4766
DOI
10.1016/j.jmrt.2021.04.080
ISSN
2238-7854
2214-0697
Abstract
Here in, we report the fabrication of thin two dimensional (2D) ZnO nanosheets (NSs) flexible piezo-phototronic ultraviolet (UV) photodetector (PD). The morphological and optical properties of the as-synthesized ZnO NSs is characterized in detail. The flexible Ag-ZnO NSs-Ag lateral PDs are fabricated on the polyethylene terephthalate (PET) substrate. A striking photoresponse is observed for 2D-ZnO under UV illumination. Furthermore, by introducing a strain (in the form of bending) the photocurrent and responsivity of this PD can be modulated via piezophototronic effect, emerging from the ZnO nanosheets. The photocurrent enhancement under bending could be attributed to the piezo polarization charges produced at ZnO/Ag interface due to strain. This piezo polarization charges result in the modulation of Schottky barrier (SB) height at the semiconductor/metal interface and induce improved photogenerated charge carriers and reduced recombination probability to result enhanced performances from the ZnO NSs photodetector. The physical mechanism involved in the enhancement of photo current via piezo-phototronic is proposed to explain change in SB height at semiconductor/ metal interface using the band diagrams. This results demonstrates an efficient prototype of the piezo-phototronic PD based on thin ZnO NSs, which provides an effective pathway to enhance the performance of optoelectronic devices. (c) 2021 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
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