Suppression of leakage current in GaN Schottky barrier diode by O2 annealing

임현식

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Suppression of leakage current in GaN Schottky barrier diode by O2 annealing

Authors: 임현식

Issue Date: 26-Apr-2012

URI: https://scholarworks.dongguk.edu/handle/sw.dongguk/46584

Place: 대한민국

Conference Date: 2012-04-25 ~ 2012-04-27

Conference Name: 2012 봄 물리학회

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Appears in Collections: College of Advanced Convergence Engineering > ETC > 2. Conference Papers

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