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Suppression of leakage current in GaN Schottky barrier diode by O2 annealing
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 임현식 | - |
| dc.date.accessioned | 2024-10-30T11:22:50Z | - |
| dc.date.available | 2024-10-30T11:22:50Z | - |
| dc.date.issued | 2012-04-26 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/46584 | - |
| dc.title | Suppression of leakage current in GaN Schottky barrier diode by O2 annealing | - |
| dc.type | Conference | - |
| dc.citation.startPage | 144 | - |
| dc.citation.endPage | 144 | - |
| dc.citation.conferenceName | 2012 봄 물리학회 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferenceDate | 2012-04-25 ~ 2012-04-27 | - |
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