Effects of AIN buffer layers on the structural, electrical, and optical properties of GaN epilayers grown on AI2O3 substrates grown by plasma-assisted molecular-beam epitaxy

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Effects of AIN buffer layers on the structural, electrical, and optical properties of GaN epilayers grown on AI2O3 substrates grown by plasma-assisted molecular-beam epitaxy

Authors: 전희창

Issue Date: 8-Jul-2010

URI: https://scholarworks.dongguk.edu/handle/sw.dongguk/44018

Place: 대한민국
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Conference Date: 2010-07-04 ~ 2010-07-08

Conference Name: "10th" Asia Pacific Conference on Plasma Science and Technology and "23rd" Symposium on Plasma Science for Materials

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Appears in Collections: College of Engineering > ETC > 2. Conference Papers

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