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Effects of AIN buffer layers on the structural, electrical, and optical properties of GaN epilayers grown on AI2O3 substrates grown by plasma-assisted molecular-beam epitaxy
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 전희창 | - |
| dc.date.accessioned | 2024-10-30T08:22:49Z | - |
| dc.date.available | 2024-10-30T08:22:49Z | - |
| dc.date.issued | 2010-07-08 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/44018 | - |
| dc.title | Effects of AIN buffer layers on the structural, electrical, and optical properties of GaN epilayers grown on AI2O3 substrates grown by plasma-assisted molecular-beam epitaxy | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | "10th" Asia Pacific Conference on Plasma Science and Technology and "23rd" Symposium on Plasma Science for Materials | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 제주도 | - |
| dc.citation.conferenceDate | 2010-07-04 ~ 2010-07-08 | - |
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Related Researcher
- Jeon, Hee Chang
- College of Engineering