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Effects of AIN buffer layers on the structural, electrical, and optical properties of GaN epilayers grown on Al2O3 substrates grown by plasma-assisted molecular-beam epitaxy
- Authors
- 강태원
- Issue Date
- 8-Jul-2010
- Place
- 대한민국
롯데호텔제주
- Conference Date
- 2010-07-04 ~ 2010-07-08
- Conference Name
- APCPST 2010
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Collections - ETC > 2. Conference Papers
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