Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Effects of AIN buffer layers on the structural, electrical, and optical properties of GaN epilayers grown on Al2O3 substrates grown by plasma-assisted molecular-beam epitaxy
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 강태원 | - |
| dc.date.accessioned | 2024-10-30T07:42:17Z | - |
| dc.date.available | 2024-10-30T07:42:17Z | - |
| dc.date.issued | 2010-07-08 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/43291 | - |
| dc.title | Effects of AIN buffer layers on the structural, electrical, and optical properties of GaN epilayers grown on Al2O3 substrates grown by plasma-assisted molecular-beam epitaxy | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | APCPST 2010 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 롯데호텔제주 | - |
| dc.citation.conferenceDate | 2010-07-04 ~ 2010-07-08 | - |
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - ETC > 2. Conference Papers
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.