Influence of quantum-mechanical narrow channel effect on electron transport properties for Si nanowire-channel MOSFETs

김득영

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Influence of quantum-mechanical narrow channel effect on electron transport properties for Si nanowire-channel MOSFETs

Authors: 김득영

Issue Date: 11-Jun-2009

URI: https://scholarworks.dongguk.edu/handle/sw.dongguk/42195

Place: 프랑스
Congress center

Conference Date: 2009-06-08 ~ 2009-06-12

Conference Name: European material research society

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Appears in Collections: College of Natural Science > Division of Physics & Semiconductor Science > 2. Conference Papers

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