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Interface Defects at the Si(100)/HfO2 Interface using DLTS Measurement
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 조훈영 | - |
| dc.date.accessioned | 2024-10-30T06:22:26Z | - |
| dc.date.available | 2024-10-30T06:22:26Z | - |
| dc.date.issued | 2009-10-07 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/42182 | - |
| dc.title | Interface Defects at the Si(100)/HfO2 Interface using DLTS Measurement | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 216th Elecrochemical Society meeting | - |
| dc.citation.conferencePlace | 오스트리아 | - |
| dc.citation.conferencePlace | 오스트리아 | - |
| dc.citation.conferenceDate | 2009-10-04 ~ 2009-10-09 | - |
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