Pulse frequency dependent synaptic characteristics in Ta/SiN/Si memristor device for neuromorphic system

Abstract

We compare the filamentary resistive switching and the homogeneous resistive switching of the Ta/SiN/Si memristor device for the implementation of hardware-based neuromorphic system. The switching mode can be determined by the first switching curve. The low-resistance state (LRS) of filamentary resistive switching has stable retention properties without the resistance degradation, indicating the existence of different switching mechanisms between two. In homogeneous resistive switching mode, a more gradual increase and decrease in conductance control is possible. The multi-level states property provides better performance of pattern recognition when applied to neural network model. Finally, we demonstrate the improved frequency dependent conductance modulation in homogeneous resistive switching mode. (c) 2021 Elsevier B.V. All rights reserved.