Electrical tunneling transport properties of back-gated spin tunneling metal oxide semiconductor diodes fabricated using ZnMnO:N nanocrystals

김득영

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Electrical tunneling transport properties of back-gated spin tunneling metal oxide semiconductor diodes fabricated using ZnMnO:N nanocrystals

Authors: 김득영

Issue Date: 29-May-2008

URI: https://scholarworks.dongguk.edu/handle/sw.dongguk/41197

Place: 프랑스
Syrasbourg

Conference Date: 2008-05-26 ~ 2008-05-30

Conference Name: E-MRS Spring Meeting

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Appears in Collections: College of Natural Science > Division of Physics & Semiconductor Science > 2. Conference Papers

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