Hydrogenation Effect of InGaP Grown on GaAs by Molecular Beam Epitaxy

김득영

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Hydrogenation Effect of InGaP Grown on GaAs by Molecular Beam Epitaxy

Authors: 김득영

Issue Date: 8-Sep-1997

URI: https://scholarworks.dongguk.edu/handle/sw.dongguk/39452

Place: 미국
Sandiego

Conference Date: 1997-09-08 ~ 1997-09-11

Conference Name: 24th International Symposium on Semiconductors

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Appears in Collections: College of Natural Science > Division of Physics & Semiconductor Science > 2. Conference Papers

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