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Hydrogenation Effect of InGaP Grown on GaAs by Molecular Beam Epitaxy
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김득영 | - |
| dc.date.accessioned | 2024-10-30T03:51:49Z | - |
| dc.date.available | 2024-10-30T03:51:49Z | - |
| dc.date.issued | 1997-09-08 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/39452 | - |
| dc.title | Hydrogenation Effect of InGaP Grown on GaAs by Molecular Beam Epitaxy | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 24th International Symposium on Semiconductors | - |
| dc.citation.conferencePlace | 미국 | - |
| dc.citation.conferencePlace | Sandiego | - |
| dc.citation.conferenceDate | 1997-09-08 ~ 1997-09-11 | - |
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