Electrical Properties of InGaAs and InP Grown by Molecular Beam Epitaxy

조훈영

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Electrical Properties of InGaAs and InP Grown by Molecular Beam Epitaxy

Authors: 조훈영

Issue Date: 1-Apr-1997

URI: https://scholarworks.dongguk.edu/handle/sw.dongguk/39410

Place: 대한민국
울산

Conference Date: 1997-04-01

Conference Name: 한국물리학회 논문발표

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Appears in Collections: College of Natural Science > Department of Physics > 2. Conference Papers

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