The Characteristics of GaN by MBE with Indium buffer layer

김득영

Detailed Information

Cited 0 time in webofscience

Cited 0 time in scopus

Metadata Downloads

The Characteristics of GaN by MBE with Indium buffer layer

Authors: 김득영

Issue Date: 2-Jul-1999

URI: https://scholarworks.dongguk.edu/handle/sw.dongguk/38042

Place: 대한민국
제주

Conference Date: 1999-07-02 ~ 1999-07-03

Conference Name: 한국진공학회 제17회 학술발표회

Files in This Item: There are no files associated with this item.

Appears in Collections: College of Natural Science > Division of Physics & Semiconductor Science > 2. Conference Papers

Show full item record

qrcode

Altmetrics

Total Views & Downloads

RSS_1.0 RSS_2.0 ATOM_1.0

30, Pildong-ro 1-gil, Jung-gu, Seoul, 04620, Republic of Korea+82-2-2260-3114

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.

Detailed Information

Altmetrics

Total Views & Downloads

BROWSE