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Interfacial defects in sstraind Si₁-x Gex epitaxial layers by rapid thermal chemical vapor deposition(RTCVD)
- Authors
- 조훈영
- Issue Date
- 15-Oct-1999
- Place
- 대한민국
부산, 부경대
- Conference Date
- 1999-10-15 ~ 1999-10-16
- Conference Name
- 한국물리학회 1999 연구논문발표회
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Collections - College of Natural Science > Department of Physics > 2. Conference Papers
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