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Interfacial defects in sstraind Si₁-x Gex epitaxial layers by rapid thermal chemical vapor deposition(RTCVD)
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 조훈영 | - |
| dc.date.accessioned | 2024-10-30T03:02:00Z | - |
| dc.date.available | 2024-10-30T03:02:00Z | - |
| dc.date.issued | 1999-10-15 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/38003 | - |
| dc.title | Interfacial defects in sstraind Si₁-x Gex epitaxial layers by rapid thermal chemical vapor deposition(RTCVD) | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한국물리학회 1999 연구논문발표회 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 부산, 부경대 | - |
| dc.citation.conferenceDate | 1999-10-15 ~ 1999-10-16 | - |
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