High fmax 0.1um gamma-gate InGaAs/InAlAs/GaAs Metamorphic HEMT

김삼동

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High fmax 0.1um gamma-gate InGaAs/InAlAs/GaAs Metamorphic HEMT

Authors: 김삼동

Issue Date: 16-Sep-2003

URI: https://scholarworks.dongguk.edu/handle/sw.dongguk/34254

Place: 대한민국

Conference Date: 2003-09-16

Conference Name: International Conference on Solid State Devices and Materials

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Appears in Collections: College of Engineering > Department of Electronics and Electrical Engineering > 2. Conference Papers

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