Small signal parameter analysis of 0.1um off-set Gamma-shaped Gate InGaAs/InAlAs/GaAs Metamorphic high electron mobility transistor

이진구

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Small signal parameter analysis of 0.1um off-set Gamma-shaped Gate InGaAs/InAlAs/GaAs Metamorphic high electron mobility transistor

Authors: 이진구

Issue Date: 26-Feb-2004

URI: https://scholarworks.dongguk.edu/handle/sw.dongguk/33669

Place: 일본
Yokosuka

Conference Date: 2004-02-26 ~ 2004-02-27

Conference Name: TSMMW2004

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Appears in Collections: ETC > 2. Conference Papers

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