Formation of InGaN nanorods with In mole fractions by hydride vapor phase epitaxy

강태원

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Formation of InGaN nanorods with In mole fractions by hydride vapor phase epitaxy

Authors: 강태원

Issue Date: 15-Mar-2004

URI: https://scholarworks.dongguk.edu/handle/sw.dongguk/32891

Place: 대한민국
Hotel Hyundai, Gyeongju

Conference Date: 2004-03-15 ~ 2004-03-19

Conference Name: The 5th International Symposium on BIue Laser and Light Emitting Diodes

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Appears in Collections: ETC > 2. Conference Papers

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