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Formation of InGaN nanorods with In mole fractions by hydride vapor phase epitaxy
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 강태원 | - |
| dc.date.accessioned | 2024-10-30T01:40:58Z | - |
| dc.date.available | 2024-10-30T01:40:58Z | - |
| dc.date.issued | 2004-03-15 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/32891 | - |
| dc.title | Formation of InGaN nanorods with In mole fractions by hydride vapor phase epitaxy | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | The 5th International Symposium on BIue Laser and Light Emitting Diodes | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | Hotel Hyundai, Gyeongju | - |
| dc.citation.conferenceDate | 2004-03-15 ~ 2004-03-19 | - |
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