Comparative studies on the conventional Metamorphic High Electron Mobility Transistor &amp; InP-composite channel Metamorphic High Electron Mobility Transistor on the Breakdown Voltage

이진구

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Comparative studies on the conventional Metamorphic High Electron Mobility Transistor & InP-composite channel Metamorphic High Electron Mobility Transistor on the Breakdown Voltage

Authors: 이진구

Issue Date: 28-Jun-2005

URI: https://scholarworks.dongguk.edu/handle/sw.dongguk/30371

Place: 대한민국
서울

Conference Date: 2005-06-28 ~ 2005-06-30

Conference Name: Asia- Pacific Workshop on Fundamentals and Application of Advanced Semiconductor

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Appears in Collections: ETC > 2. Conference Papers

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