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Electrical properties of the memory trap in Silicon-Rich-Oxide-Nitride(SRON) MOS structures
- Authors
- 조훈영
- Issue Date
- 21-Oct-2005
- Place
- 대한민국
전북대학교
- Conference Date
- 2005-10-21 ~ 2005-10-22
- Conference Name
- 한국물리학회 논문 발표회
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Collections - College of Natural Science > Department of Physics > 2. Conference Papers
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