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Comparative studies on the conventional Metamorphic High Electron Mobility Transistor and InP-composite channel Metamorphic High Electron Mobility Transistor on the breakdown Voltage
- Authors
- 김삼동
- Issue Date
- 28-Jun-2005
- Place
- 대한민국
서울대학교
- Conference Date
- 2005-06-28 ~ 2005-06-30
- Conference Name
- AWAD 2005
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