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Comparative studies on the conventional Metamorphic High Electron Mobility Transistor and InP-composite channel Metamorphic High Electron Mobility Transistor on the breakdown Voltage
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김삼동 | - |
| dc.date.accessioned | 2024-10-30T01:25:37Z | - |
| dc.date.available | 2024-10-30T01:25:37Z | - |
| dc.date.issued | 2005-06-28 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/29663 | - |
| dc.title | Comparative studies on the conventional Metamorphic High Electron Mobility Transistor and InP-composite channel Metamorphic High Electron Mobility Transistor on the breakdown Voltage | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | AWAD 2005 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 서울대학교 | - |
| dc.citation.conferenceDate | 2005-06-28 ~ 2005-06-30 | - |
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