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Cited 13 time in webofscience Cited 14 time in scopus
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Enhancing hole carrier injection via low electrochemical doping on circularly polarized polymer light-emitting diodesopen access

Authors
Yan, HaoWade, JessicaWan, LiKwon, SooncheolFuchter, Matthew J.Campbell, Alasdair J.Kim, Ji-Seon
Issue Date
Jul-2022
Publisher
Royal Society of Chemistry
Keywords
Additives; Circular Polarization; Conjugated Polymers; Display Devices; Electroluminescence; Light; Stereochemistry; Blend System; Carrier Injection; Circularly-polarized; Device Performance; Electrochemical Doping; Hole Carriers; Polarized Electroluminescence; Polymer Light Emitting Diode; Small Molecules; Π-conjugated Polymer; Organic Light Emitting Diodes (oled)
Citation
Journal of Materials Chemistry C, v.10, no.25, pp 9512 - 9520
Pages
9
Indexed
SCIE
SCOPUS
Journal Title
Journal of Materials Chemistry C
Volume
10
Number
25
Start Page
9512
End Page
9520
URI
https://scholarworks.dongguk.edu/handle/sw.dongguk/2934
DOI
10.1039/d2tc01010k
ISSN
2050-7526
2050-7534
Abstract
Circularly polarized electroluminescence (CP-EL) from a blend system of chiral small-molecule additives and device optimised achiral pi-conjugated polymers (pi-CPs) is of great interest for next-generation display technologies. However, CP polymer light-emitting diodes can suffer from unbalanced charge transport and unfavorable energetics between chiral additives and achiral polymers, which can limit the efficiency of charge injection and device performance. Herein, we demonstrate the use of a small amount of chemcially modified electrochemical doping agent (EDA, 1.5 wt%) to control such limitations. The EDA with a long cationic alkyl chain enables strong hydrophobicity and stable electrochemical doping of achiral pi-CP F8BT in F8BT:aza[6]H blends, which allows for better charge injection and balance. This leads to improved device performance while maintaining highly dissymmetric electroluminescence (g(EL) similar to 0.50@580 nm) and an inverted dissymmetry factor (g(EL) = -0.65@525 nm). These findings indicate that EDAs may provide a simple approach to improve the performance of CP optoelectronic devices.
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