Influence of Gate Recess Structure on the DC Characteristics of 0.1um Metamorphic HEMTs

이진구

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Influence of Gate Recess Structure on the DC Characteristics of 0.1um Metamorphic HEMTs

Authors: 이진구

Issue Date: 7-May-2006

URI: https://scholarworks.dongguk.edu/handle/sw.dongguk/29125

Place: 미국
Denver

Conference Date: 2006-05-07 ~ 2006-05-12

Conference Name: 206th Electrochemical Society Meeting

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Appears in Collections: ETC > 2. Conference Papers

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