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Influence of Gate Recess Structure on the DC Characteristics of 0.1um Metamorphic HEMTs
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이진구 | - |
| dc.date.accessioned | 2024-10-30T01:22:46Z | - |
| dc.date.available | 2024-10-30T01:22:46Z | - |
| dc.date.issued | 2006-05-07 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/29125 | - |
| dc.title | Influence of Gate Recess Structure on the DC Characteristics of 0.1um Metamorphic HEMTs | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 206th Electrochemical Society Meeting | - |
| dc.citation.conferencePlace | 미국 | - |
| dc.citation.conferencePlace | Denver | - |
| dc.citation.conferenceDate | 2006-05-07 ~ 2006-05-12 | - |
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