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Electrical trap level in a GaN nanorod p-n junction grown by molecular-beam epitaxy
- Authors
- 임현식
- Issue Date
- 22-Aug-2006
- Place
- 대한민국
제주도 라마다 플라자 호텔
- Conference Date
- 2006-08-22 ~ 2006-08-25
- Conference Name
- The 13th int. symposium on the physics of semiconductors and applications-2006
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Collections - College of Advanced Convergence Engineering > ETC > 2. Conference Papers
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