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Electrical trap level in a GaN nanorod p-n junction grown by molecular-beam epitaxy
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 임현식 | - |
| dc.date.accessioned | 2024-10-30T01:20:35Z | - |
| dc.date.available | 2024-10-30T01:20:35Z | - |
| dc.date.issued | 2006-08-22 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/28774 | - |
| dc.title | Electrical trap level in a GaN nanorod p-n junction grown by molecular-beam epitaxy | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | The 13th int. symposium on the physics of semiconductors and applications-2006 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 제주도 라마다 플라자 호텔 | - |
| dc.citation.conferenceDate | 2006-08-22 ~ 2006-08-25 | - |
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