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Charge Traps and Interface Traps in Non-volatile Memory Device with Oxide-Nitride-Oxide Structures
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 조훈영 | - |
| dc.date.accessioned | 2024-10-30T01:05:32Z | - |
| dc.date.available | 2024-10-30T01:05:32Z | - |
| dc.date.issued | 2007-05-19 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/27813 | - |
| dc.title | Charge Traps and Interface Traps in Non-volatile Memory Device with Oxide-Nitride-Oxide Structures | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 5th International Conference on Silicon Epitaxy and Heterostructures | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | MERCURE MARSEILLE EURO CENTRE | - |
| dc.citation.conferenceDate | 2007-05-19 ~ 2007-05-25 | - |
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