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Near infrared light emitting from InN/InGaN/GaN dot-in-a-nanorod heterostructure
- Authors
- Lee, S.-T.; Choi, H.-S.; Park, B.-G.; Kim, K.-J.; Kim, M.-D.; Kim, S.-G.; Yang, W.-C.
- Issue Date
- Jun-2013
- Citation
- CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013, pp JTh2A.102
- Indexed
- SCOPUS
- Journal Title
- CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013
- Start Page
- JTh2A.102
- Abstract
- We report on the light emitting of InN/InGaN/GaN dot-in-a-nanorods heterostructure grown on Si(111) substrates using plasma-assisted molecular beam epitaxy. Sharp and isolated single exciton emission line in the near infrared spectral range was observed. © OSA 2013.
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Collections - College of Natural Science > Department of Physics > 1. Journal Articles
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Related Researcher
- Yang, Woo Chul
- College of Natural Science (Department of Physics)