A 4.56 Gbps/lane MIPI C-PHY Transmitter with Boosting Pre-driveropen access
- Authors
- Jin, Minhyun; Park, Kwangjin; Kim, Soo Youn
- Issue Date
- Aug-2024
- Publisher
- IEEE
- Keywords
- Boosting; Boosting pre-driver; C-PHY transmitter; Clocks; Driver circuit; Impedance; Impedance matching; Mobile industry processor interface; Symbols; Transistors; Transmitters; Wires
- Citation
- IEEE Access, v.12, pp 128993 - 128999
- Pages
- 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE Access
- Volume
- 12
- Start Page
- 128993
- End Page
- 128999
- URI
- https://scholarworks.dongguk.edu/handle/sw.dongguk/26322
- DOI
- 10.1109/ACCESS.2024.3443991
- ISSN
- 2169-3536
2169-3536
- Abstract
- This paper describes the development of a Mobile Industry Processor Interface (MIPI) C-PHY transmitter (TX) fabricated using a 28-nm CMOS process with a 1 V supply. In its operational mode, the TX effectively converted parallel signals into low-voltage and high-speed tri-level signals, facilitating seamless serial data transmission. A key aspect of the proposed TX design was the integration of an equalizer (TxEQ) capable of implementing de-emphasis to mitigate channel-induced inter-symbol interference, thereby ensuring robust high-speed data transmission. Furthermore, the output driver was meticulously designed with an optimized structure to ensure impedance matching in different operating modes. Remarkably, the introduction of a boosting pre-driver further enhanced the driving capability, operating independently from the TxEQ of the output driver. Each lane occupied an area of 0.284 mm2, accommodating necessary components such as a pseudo-random bit sequence for random data generation. By employing a boosting technique, the TX achieved a commendable power efficiency of 1.21 mW/Gbps/lane while simultaneously delivering a remarkable 0.52 UI eye-opening at a data transfer rate of 4.56 Gbps/lane. Authors
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Collections - College of Advanced Convergence Engineering > Division of System Semiconductor > 1. Journal Articles

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