High-Performance 1D−2D Te/MoS2 Heterostructure Photodetectors with Tunable Giant Persistent Photoconductivity

Abstract

This study presents vertically stacked van der Waals heterojunctions comprising multilayered tellurium (Te) and exfoliated molybdenum disulfide (MoS2) for high-performance broadband phototransistors exhibiting tunable giant persistent photoconductivity. The type I heterojunction configuration significantly enhances and broadens spectral responsivity due to its large absorption cross section and optimal band alignment. The photodetector achieves a relatively excellent responsivity of 209 A/W and a high detectivity of 3.4 x 10(13) under visible wavelength irradiation as well as a comparable responsivity of 10 A/W under infrared wavelength. Notably, the giant persistent photoconductivity in this architecture can be modulated by the drain voltage (V (DS)) and the wavelength of the incident light. This work paves the way for high-performance, heterostructured TMDC-based futuristic optoelectronic applications.