2D van der Waals Heterostructure with Tellurene Floating-Gate for Wide Range and Multi-Bit Optoelectronic Memory

Abstract

Intensive research on optoelectronic memory (OEM) devices based on two-dimensional (2D) van der Waals heterostructures (vdWhs) is being conducted due to their distinctive advantages for electrical-optical writing and multilevel storage. These features make OEM a promising candidate for the logic of reconfigurable operations. However, the realization of nonvolatile OEM with broadband absorption (from visible to infrared) and a high switching ratio remains challenging. Herein, we report a nonvolatile OEM based on a heterostructure consisting of rhenium disulfide (ReS2), hexagonal boron nitride (hBN) and tellurene (2D Te). The 2D Te-based floating-gate (FG) device exhibits excellent performance metrics, including a high switching on/off ratio (∼106), significant endurance (>1000 cycles) and impressive retention (>104 s). In addition, the narrow band gap of 2D Te endows the device with broadband optical programmability from the visible to near-infrared regions at room temperature. Moreover, by applying different gate voltages, light wavelengths, and laser powers, multiple bits can be successfully generated. Additionally, the device is specifically designed to enable reconfigurable inverter logic circuits (including AND and OR gates) through controlled electrical and optical inputs. These significant findings demonstrate that the 2D vdWhs with a 2D Te FG are a valuable approach in the development of high-performance OEM devices. © 2024 American Chemical Society.