Ferromagnetic Properties of Five-Period InGaMnAs/GaAs Quantum Well Structure (vol 46, pg 3917, 2017)open access
- Authors
- Kwon, Young H.; Lee, Sejoon; Yang, Woochul; Park, Chang-Soo; Yoon, Im Taek
- Issue Date
- Mar-2018
- Publisher
- SPRINGER
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, v.47, no.3, pp 2192 - 2192
- Pages
- 1
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- JOURNAL OF ELECTRONIC MATERIALS
- Volume
- 47
- Number
- 3
- Start Page
- 2192
- End Page
- 2192
- URI
- https://scholarworks.dongguk.edu/handle/sw.dongguk/25514
- DOI
- 10.1007/s11664-018-6064-5
- ISSN
- 0361-5235
1543-186X
- Abstract
- In the original article some funding information in the Acknowledgements section was inadvertently omitted. Following is the corrected text. This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) grant funded by the Ministry of Education, Science and Technology (MEST) (NRF-2016R1D1A1B03930992), (NRF-2016 R1A6A1A03012877), and (NRF-2014M2B2A4032 178), as well as under the framework of the international cooperation program managed by the National Research Foundation of Korea (2015K2A1B8068543). © 2018, The Minerals, Metals & Materials Society.
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Collections - College of Natural Science > Department of Physics > 1. Journal Articles
- College of Advanced Convergence Engineering > Division of System Semiconductor > 1. Journal Articles

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